GaN Semiconductors
GaN Semiconductors
EPC's GaN semiconductors are the core of large surface area wireless power
EPC’s 100 V EPC2107 and 60 V EPC2108 eGaN half-bridge power integrated circuits with integrated bootstrap FET eliminate gate driver induced reverse recovery loses as well as the need for a high side clamp. Designed specifically for resonant wireless power transfer applications, these products enable rapid design of highly efficient end-use systems, setting the stage for mass adoption of wireless power circuits.
Features
- Higher switching frequency
- Lower switching losses, lower parasitic inductance, and lower drive power
- Integrated design
- Increased efficiency, increased power density, reduced assembly costs
- Small footprint
- Low inductance, extremely small, 1.35 mm x 1.35 mm BGA surface-mount passivated die
Applications
- Wireless power for 5G
- Mobile devices
- Robots
- Industrial automation
- Medical equipment and automotive
GaN Semiconductors
| Image | Manufacturer Part Number | Description | Available Quantity | View Details | |
|---|---|---|---|---|---|
 |  | EPC2107 | GANFET 3 N-CH 100V 9BGA | 18975 - Immediate | View Details |
| | EPC2108 | GANFET 3 N-CH 60V/100V 9BGA | 19365 - Immediate | View Details |
Associated Development Boards
| Image | Manufacturer Part Number | Description | Available Quantity | View Details | |
|---|---|---|---|---|---|
|  | EPC9063 | BOARD DEV FOR EPC2107 100V EGAN | 21 - Immediate | View Details |
|  | EPC9511 | MULTI-MODE WIRELESS POWER AMPLIF | 3 - Immediate | View Details |
|  | EPC9510 | EVAL BOARD AMP ZVS CLASS D | 6 - Immediate | View Details |
|  | EPC9121 | MULTI-MODE WIRELESS POWER DEMONS | 12 - Immediate | View Details |
|  | EPC9127 | CLASS 2 WIRELESS POWER DEMONSTRA | 10 - Immediate | View Details |